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RF High Power Broadband Amplifiers
Chengdu KeyLink Microwave Technology Co., Ltd.
Broadband amplifiers of KeyLink have exceptional RF and Microwave performance. These RF broadband amplifiers(wideband amplifiers) are available in wide frequency bands from 1 MHz to 18 GHz. Power levels for octave and multi-octave designs range from 1 watts to over 1000 watts. Applications of these broadband RF amplifiers range from radar, jamming, communication to test and measurement.
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RF Amplifier (110/220V Powered)
EMC Style AC powered RF system amplifiers with broadband high output power including multiple protection and control features
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Broadband Power Amplifier
Panda Microwave design, manufacture, and support a wide variety of Power Amplifier. RF amplifiers product line from Panda Microwave consists of low noise amplifiers, Power Amplifier Module and Solid State High Power Amplifier. Our Power amplifiers cover frequency range from 100MHz to 50GHz and used Thin-film Technology. Our low noise amplifiers have superior noise figure numbers and a variety of models. Gain block low noise amplifiers provide all around gain where noise is not critical. High power amplifiers system equipment is available with either manual or digital control interfaces, power capacities up to 100W pulse power.
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Pulsed Injection-Locked IMPATT Amplifiers
Pulsed ESR/EPR
Insight Product Company offers pulse injection-locked IMPATT amplifiers for pulse ESR/EPR experiments. Pulsed injection-locked amplifier incorporates IMPATT diode, ferrite input/output isolators, circulators, and pulse modulator. Only DC power supply, RF input signal, and external trigger signal are required to operate the amplifier. Output phase noise parameters are very close to the noise parameters of the input RF signal.
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Power Amplifiers
Triad’s line of RF and microwave Power Amplifier modules for extended range amplified radio applications set the bar for efficiency, linearity, and size-to-power ratio. We have designed hundreds of COTS modules for exacting frequencies up to 40 GHz . They offer high power levels into the hundreds of watts. And if a standard RF/microwave amplifier design does not fit your exact requirements, we’re specialists in creating custom-modified versions of any of our COTS power amplifier modules.
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Amplifiers
Becker Nachrichtentechnik GmbH
Becker Nachrichtentechnik GmbH offers a large portfolio of high performance broadband RF amplifiers. Optimized for linearity, high dynamic range and low noise, they cover all widely used radio standards like cellular, satellite radio, TETRA/BOS, GNSS, GPS, 802.11, including the new bands for LTE-U. They amplify wideband radio signals from shortwave over UHF, VHF up to 18 GHz in 50 Ohm technology (I-band, G-band, P-band, L-band, S-band, C-band and X-band). They are used as compact RF drivers, antenna pre-amplifiers or RF boosters in a variety of applications ranging from tunnel radio coverage extension, over airspace radio monitoring to in-ear monitoring and can also be offered as 1U 19” rack variants. Due to their advanced design, the power consumption is significant lower than typical industry alternatives, saving cost at customers with respect to cooling.
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PXI Source/Measure Unit
Keysight PXI source/measure unit (SMU) offers high-throughput and measurement quality for design validation and production test of RF power amplifiers. It delivers industry-leading output stability under extreme, dynamic load conditions and unmatched transient performance to dramatically reduce voltage droop due to pulse loading for faster test time.
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Gain Blocks
Analog Devices RF amplifiers are designed utilizing the company’s leading amplifier and RF IC expertise. Our extensive family of single-ended input/output, fixed-gain amplifiers can be used from dc to microwave and include gain blocks, low noise amplifiers, intermediate frequency amplifiers, driver amplifiers, and differential amplifiers. These devices offer high linearity, low noise figures, and various fixed-gain options, as well as low power consumption; they are all fully specified over frequency, temperature, and supply voltage for use in a variety of applications.
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Shortwave Plus 50 MHz Power Amplifier
OM2000A+
Thank you for purchasing this new model of the OM Power’s RF power amplifiers line for HF and 50 MHz amateur radio bands. You now own, the OM2000A+, an automatic unit with no knobs, no rotaryswitches on the front panel, just two small switches and one large touch display.Smart design, modern conception, high reliability is the result of OM Power’s development and many years of experience with overall solutions and special attention with the design of the protection circuits.This product is covered by two years of warranty on the amplifier itself and one year for the tube.We wish you will have many years of trouble-free use of this equipment, lots of fun and successful contacts in the world of amateur radio.
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Solid-State RF amplifier module for High Power Testing
Exodus Advanced Communications
Exodus introduces the AMP1071 - a Solid-State RF amplifier module covering the entire ultra-wide 2.0-20.0GHz frequency range instantaneously at 20W CW minimum. Using State of the Art GaN devices, the AMP1071 operates from a 32VDC source at less than 10A consumption. This module is suitable for use with all single channel modulation standards and applications requiring high power and ultra-wide band coverage. It has built-in protection circuits, high reliability and ruggedness. Typical applications include High Power Testing, EMI/RFI, EW and Communications and Jamming.
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Mini Receiver
FB7-NX
In about 1935, the National Radio Company of Malden, Mass., brought out a “hot” high frequency receiver, called the FB7, and the subsequent FB-7X. It featured a super-hetrodyne design with plug-in coils that gave it a broad frequency range. The “X” model also incorporated a crystal filter in the intermediate frequency section, thus giving it additional selectivity. The receiver was viewed by radio amateurs as a technological breakthrough, and it was also used commercially for point to point high frequency communications. As the receiver did not have an internal RF amplifier section, a separately tunable RF amplifier was later provided in a separate enclosure for additional performance capabilities. Now, National RF, Inc., is resurrecting the fabled receiver name with an all solid-state, hot mini receiver, which also utilizes plug-in coils to cover the HF spectrum. The mini-receiver is designed for use by radio amateurs as well as serious short-wave listeners, and allows reception of AM, CW, and SSB signals. It incorporates a super-hetrodyne design with a dual gate FET built-in RF preamplifier and a ceramic filter for selectivity, often required when used in a crowded amateur radio band. In addition, the receiver has a buffered rear panel output of the high frequency oscillator for use with either a frequency counter for exact receive frequency display, or for interface with an outboard transmitter. A rear panel jack is also provided for muting the receiver when a transmitter is placed into the transmit mode. And, the receiver is small enough to fit into carry-on luggage and taken on trips when it is desired to “keep an ear” on amateur radio or other high frequency activity. The receiver utilizes rear panel plug-in coil assemblies which contain the RF amplifier, mixer, and oscillator tuned circuits. Each plug-in coil assembly also comes with a separate dial scale, which is inserted onto the front panel for displaying the tuned frequency. A very smooth 6 to 1 planetary drive is used for tuning the receiver. Other front panel controls include RF preamplifier peak, volume control, Beat Frequency Oscillator adjustment, and RF gain control. Other switches include filter bandwidth, AM/CW/SSB selection, Power, and a general coverage/band spread control for certain plug-in assemblies. The receiver is intended to drive head-phones via a rear panel jack, but has sufficient output to drive a small external speaker.
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Pulsed ESR/EPR: Pulsed Injection-locked IMPATT Amplifiers
Insight Product Company offers pulse injection-locked IMPATT amplifiers for pulse ESR/EPR experiments. Pulsed injection-locked amplifier incorporates IMPATT diode, ferrite input/output isolators, circulators, and pulse modulator. Only DC power supply, RF input signal, and external trigger signal are required to operate the amplifier. Output phase noise parameters are very close to the noise parameters of the input RF signal.
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Driver Amplifiers
Analog Devices RF amplifiers are designed utilizing the company’s leading amplifier and RF IC expertise. Our extensive family of single-ended input/output, fixed-gain amplifiers can be used from dc to microwave and include gain blocks, low noise amplifiers, intermediate frequency amplifiers, driver amplifiers, and differential amplifiers. These devices offer high linearity, low noise figures, and various fixed-gain options, as well as low power consumption; they are all fully specified over frequency, temperature, and supply voltage for use in a variety of applications.
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High-performance LPDA
ALP690
The ALP690 is a high-performance LPDA (log periodic dipole array) antenna with a bypassable, built-in RF amplifier for use with wireless microphone receivers in location or studio production. The design delivers +4 dBd of passive gain in a directional pattern to extend operating range, and, when DC power is applied, the amplifier applies gain to overcome loss in long coaxial cable runs. By offering both active and passive operation modes, the ALP690 can be used as a receiver antenna (active or passive) and as a transmitter antenna (passive only).
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RF Amplifiers up to 1000 MHz
Narrow and Broad band high power RF modules and rack mount amplifier systems using solid state devices including LDMOS and GaAs in Class A and Class A/B topologies for Pulse, AM, FM, continuous wave and digital modulation applications that include EW, Radar, Jamming, EMI and EMC radiated immunity, and wireless communications testing.
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Test Contactor/WLCSP Probe Head
ACE
ACE™ test sockets offer optimal RF performance for fine pitch FBGA, QFN and wafer-level packages for Power Amplifiers, RF switches and mobile communications. Supporting pitches down to 0.4 mm, ACE features an innovative design that provides superior performance, improved yields and power efficiency.ACE probe heads deliver exceptional electrical performance, both DC and RF. Manufactured from HyperCore™ base material, a proprietary material of Cohu’s Everett Charles Technologies, ACE probes have the electrical properties of BeCu with the non-oxidizing properties of a precious metal. The short signal path, sharp tips, and large contact area between plungers provide high current conductance and reliable contact with less force.
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POWER ATTENUATORS
TYPE ATF
National RF’s Type ATF Power Attenuators were designed to allow interfacing of linear power amplifiers to RF exciters, where a specific amount of drive to the amplifier is prescribed. Often, however, drive from the RF exciter exceeds this minimum prescribed level and some form of power attenuation must be used in order to not damage the input of the power amplifier. National RF’s type ATF-3 offers 3 dB of power attenuation (1/2 of the power) when used between the exciter and the amplifier and will handle an input power of 132 Watts, RMS (continuous power) while providing about 66 Watts RMS output power, when it is terminated into 50 ohms. In practice, the ATF-3 attenuator will handle exciters achieving Peak Envelope Power levels (PEP) in the area of 200 to 250 Watts while providing half of that power to the load. For less attenuation requirements, the ATF-1 and ATF-2 offer 1 and 2 dB of attenuation, respectively.
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GaN Power Amplifiers > 5W
Macom Technology Solutions Holdings Inc.
MACOM GaN RF power amplifier solutions are designed with the latest GaN-on-SiC and GaN-on-Si technologies. Our MACOM PURE CARBIDE series of GaN-on-SiC power amplifiers offers high performance and reliability for the most demanding applications. Our expanding GaN portfolio is designed to address the challenging requirements of Aerospace & Defense, Industrial, Scientific and Medical applications and 5G wireless infrastructure. MACOM GaN products deliver output power levels ranging from 2 W to over 7 kW and exhibit best in class RF performance with respect to gain and efficiency. For sensitive Aerospace & Defense applications MACOM can offer a US only supply chain with AS9100D Certification.
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Test System Optimized for High Throughput, Low Cost of Test for Single Site, Multi-site and Index Parallel Applications
ETS-88RF
Targeting the needs of power amplifier (PA) and front-end-module (FEM) semiconductor manufacturers, the ETS-88RF test system is aligned with the test challenges associated with these direct RF radio wave interface components. The precision with which the ETS-88RF can measure high-gain, wideband frequency performance, adjacent channel leakage and power supply efficiency makes this test system the most cost-effective alternative to bench set-ups. Teradyne routinely provides timely updates to a substantial library of RF Standards (such as 802.11xx and 3GPP) targeted for PA and FEM test.
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RF Amplifier Modules
Analog Devices RF amplifier modules offer high linearity, low noise figures, and low phase noise, as well as low power consumption. These devices are all fully specified over frequency and temperature for use in a variety of applications.
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RFFE Protocol Analyzer and Exerciser
PGY-RFFE-EX-PD
Prodigy Technovations Pvt. Ltd.
RFFE Protocol Analyzer (PGY-RFFE-EX-PD) is the Protocol Analyzer with multiple features to capture and debug communication between host and design under test. The RF Front-end control interface (RFFE) Serial bus interface is emerging as a chosen for controlling RF frond end devices. There are variety of front end devices such as Power Amplifiers (PA), Low-Nose Amplifiers (LNA), filters, switches, power management modules, antenna tuners. It is widely used in mobile devices.
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PXIe-4154, 2-Channel, 8 V, 3 A PXI Programmable Power Supply
781155-01
2-Channel, 8 V, ±3 A PXI Programmable Power Supply—The PXIe‑4154 is a specialized programmable power supply for battery simulation. It is designed to simulate a lithium‑ion battery cell’s transient speed, output resistance, and 2‑quadrant operation (source/sink). Critical to many RF and wireless applications, the simulator’s fast transient response time allows it to rapidly respond to changes in load current with minimal voltage dip, which makes the PXIe‑4154 ideal for powering devices under test (DUTs) such as RF power amplifiers, cellular handsets, and a variety of other mobile devices. To model the behavior of a battery more accurately, you can use the onboard programmable output resistance to simulate a battery’s internal resistance. For quiescent and standby current measurements, the PXIe‑4154 features integrated current measurement.
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PXIe Dual Channel 20GHz 30dBm RF Amplifier
3202
Model TE3202 is a dual channel RF amplifier in a single slot PXIe form factor that can operate from 100kHz to 20GHz, designed for high frequency, and high power signal amplification.
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Microwave System Amplifier, 0.5 to 26.5 GHz
83017A
The Keysight 83017A microwave system amplifier is a compact, off-the-shelf amplifier designed for systems designers and integrators. This amplifier provides power where you need it to recover system losses and to boost available power in RF and microwave ATE systems. The ultrabroad bandwidth from 500 MHz to 26.5 GHz allows the designer to replace several narrow bandwidth amplifiers with a single Keysight amplifier, eliminating the need for crossover networks or multiple bias supplies.
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Power Limiter, 0.01 to 26.5 GHz
N9355C
The N9355C power limiter provides the best broadband input power protection to sensitive RF and microwave instruments and components, like network analyzers, spectrum analyzers, and amplifiers, from excess RF power, DC transients and ESD. Minimize your measurement uncertainty and improve your measurement accuracy with the limiter's superior RF performance.
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Microwave System Amplifier, 45 MHz to 50 GHz
83051A
The Keysight 83051A microwave system amplifier is a compact, off-the-shelf amplifier designed for systems designers and integrators. This amplifier provides power where you need it to recover system losses and to boost available power in RF and microwave ATE systems. The ultrabroad bandwidth from 45 MHz to 50 GHz allows the designer to replace several narrow bandwidth amplifiers with a single Keysight amplifier, eliminating the need for crossover networks or multiple bias supplies.
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Quad RF Driver
The Quad RF Driver contains four independent RF channels, each with an RF synthesizer, variable attenuator, and 1W power amplifier. The RF signal can originate from either the internal synthesizer or an external source via SMA input. All channels have independent frequency, phase, and gain settings and can be operated in one of two modes. The “Wideband” mode operates from 35MHz to 2GHz with a 3.472KHz resolution; over this range the frequency roll-off is approximately 0.5dB/100MHz. “Int-N Phase Adjust” mode allows the user to set and maintain a fixed phase relationship between all four channels. This mode is designed to operate between 300 and 460MHz with a 2MHz resolution. Two additional inputs are provided for an external frequency reference and digital modulation.
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Ophir Power Amplifiers
Ophir RF power amplifiers are rugged and reliable. They are available as complete rack mounted units incorporating power supply, fans and heatsinks, or as compact modules requiring a DC supply. Fans and/or heatsinks can be included if required.
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Components - Power Amplifiers (FPA)
FPA Series
FPA series driver amplifiers and power amplifiers are discrete and/or MMIC pHEMT device-based amplifiers that operate over the frequency range 18 to 110 GHz for high output power applications. The amplifiers are offered in two categories, standard and custom built up to 250 GHz.The custom-built amplifiers are offered in various RF interfaces, including standard waveguide or coaxial connectors, for convenient system integration. The optional input and output integrated isolators are available to further improve the port return loss.
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VHF Band 1.0 Watt Amplifier With RF Bypass
Teledyne RF & Microwave has developed a 35 to 350 MHz custom amplifier with 1 watt output power. The amplifier has 29 dB gain with 3 dB noise figure. The amplifier assembly has a RF switch so that the RF input can be connected directly to the output bypassing the amplifier. The amplifier goes into the "bypass" state when the DC bias is removed from the switch. This unit is one of a series of amplifiers that covers the 1 MHz to 2100 MHz with similar operation.
