GaN
Gallium Nitride is a stable wide bandgap semiconductor material. Also known as: Gallium Nitride
See Also: LED, Transistor
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Product
GaN Amplifiers
SBP-3233831838-KFKF-E1-HR
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Model SBP-3233831838-KFKF-E1-HR is a power amplifier with a typical small signal gain of 18 dB and a nominal Psat of +38 dBm across the frequency range of 32 to 38 GHz. The DC power requirement for the amplifier is +30 VDC/2 A. The mechanical configuration is an inline structure with K(F) connector as its input port and output port. Other port configurations, such as K connectors and WR-28 waveguides for either the input or output, are also available under different model numbers.
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GaN 100W Power Amplifiers
PE15A5033F
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The PE15A5033F is a 100 W high gain Class A/AB Coaxial Linear Power Amplifier operating in the 0.7 to 2.7 GHz frequency range. The amplifier offers 100 Watts typical saturated power and 45 dB minimum small signal gain with 1.5 dB typical gain flatness @ Psat. The amplifier requires typically a +30V DC power supply. The SMA connectorized module is unconditionally stable and operates over the temperature range of 0C and +50C. The unit comes with a Heatsink and Fan.
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GaN Power Amplifiers > 5W
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Macom Technology Solutions Holdings Inc.
MACOM GaN RF power amplifier solutions are designed with the latest GaN-on-SiC and GaN-on-Si technologies. Our MACOM PURE CARBIDE series of GaN-on-SiC power amplifiers offers high performance and reliability for the most demanding applications. Our expanding GaN portfolio is designed to address the challenging requirements of Aerospace & Defense, Industrial, Scientific and Medical applications and 5G wireless infrastructure. MACOM GaN products deliver output power levels ranging from 2 W to over 7 kW and exhibit best in class RF performance with respect to gain and efficiency. For sensitive Aerospace & Defense applications MACOM can offer a US only supply chain with AS9100D Certification.
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Wideband GaN Amplifiers
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The Teledyne RF & Microwave family of GaN-based amplifiers maximizes power density and efficiency, and establishes a new benchmark for small size in the 0.1 to 6.0 GHz range that operates over multi octave. With dimensions of 2.5"L x 2"W x 0.42"H at only 2.1 cubic inches, these modular, non-ITAR GaN amplifiers maintain the rugged design characteristics needed for harsh airborne and land based requirements.
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GaN substrates
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Sumitomo Electric Industries, Ltd.
Gallium Nitride (GaN) substrates are widely used for optical devices in the blue-violate to green ranges due to their excellent material characteristics. In recent years, GaN substrates have been drawing attention for power devices. Many development projects are underway.
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Solid State GaN (Gallium Nitride) Amplifiers
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Fairview Microwave’s solid state GaN (Gallium Nitride) power amplifiers (also called SSPAs) feature broad frequency bands ranging from 30 MHz to 7.5 GHz and very high gain levels from 43 to 60 dB. These GaN SSPAs also show impressive harmonic response (-15 to -20 dBc) under worst case conditions. Saturated output power levels range from 10W to 100W with 20% to 35% Power Added Efficiency (PAE). All of our high power solid state GaN amplifiers from Fairview have internally regulated single voltage supplies. Our GaN SSPAs are designed to withstand environmental conditions such as humidity, altitude, shock and vibration with an operating temperature ranges from -40°C to +85°C. Some models are also equipped with integrated heat sinks and cooling fans. Most designs are EAR99.
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SSPAs / LNAs / Broadband
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SSPAs based on the latest Galium Nitride (GaN) technology offer the best combination of high peak powers, high reliability, high efficiency, and soft degradation. High efficiency and high power are hallmarks of GaN technology, enabling SSPAs to challenge traditional tube-based amplifiers across the design spectrum. In addition the long lifetime from these devices, combined with the gradual degradation should individual devices fail, provide unparalleled service lifetime. Techniques such as bias modulation and linearization provide even better prime-power efficiency while still meeting the demanding requirements of pulsed or CW applications.
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Product
DL-HCM Series High-Temperature Solder-In Tip
DL-HCM-HiTemp
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60 V of common mode and 80 V differential input range with 1 GHz of bandwidth, make these probes ideal for lower voltage GaN power conversion measurements. The 60 V of common mode is well suited for handling any float of the battery and bulk/absorption voltage during charging, while the 80 V differential input range provide margin for any overshoot.
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High Voltage Switching Test System
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The advanced development of new technologies, such as SiC and GaN, have opened the opportunity for more efficient and higher voltage/power performance in switching and power management circuits. Their high cutoff frequencies, low on-state resistance, and very high breakdown voltages can increase power supply power handling densities approaching hundreds of watts/inch. Reliability of these new technologies and techniques is critical for realizing practical applications. While Silicon devices have a rich history of proven reliability, these newer compound semiconductor technologies are too new to have a reliability history and have not been well proven. Further, process variations, even in well-controlled lines, yield widely varying results. This has driven the need for additional testing and to burn-in devices prior to delivery.
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Product
Microscope Photoluminescence Spectrometer
Flex One
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Photoluminescence (PL) is the light emission from a material under the excitation by ultraviolet, visible or near infrared radiation. In semiconductor luminescent property measurements, the sample (e.g. GaN, ZnO, GaAs etc.) was usually excited by a laser (with a wavelength of 325 nm, 532 nm, 785 nm etc.), and its PL spectrum is measured to analyze the optical physical properties, such as the band gap width etc.. Photoluminescence is a high sensitivity, non-destructive analysis method, which can provide the information about the structure, composition and surrounding atomic arrangement of materials. Therefore, it is widely used in physics, materials science, chemistry and molecular biology and other related fields.
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Osram High Power Blue Violet Laser Diodes (450-488nm)
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The Optoelectronics Company Ltd
OSRAM Opto Semiconductors is a key player in the field of visible InGaN (Indium Gallium Nitride) lasers. OSRAM Opto Semiconductors offer leading product performance and innovative packaging. Thanks to their excellent beam quality, OSRAM laser diodes are ideally suited for the optical imaging of light. Not only that, but their small package size is particularly beneficial to highly compact systems, such as pico projectors. OSRAM laser diodes offer high efficiency and long lifetime: due to their excellent efficiency (ratio of light produced compared to electric power consumed), the temperature increase experienced by blue InGaN lasers during operation is kept to an absolute minimum, allowing them to deliver a long life – up to 10,000 hours at 40 °C.
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Communications/Data Link Amplifiers
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Amplifiers specific to the Communications systems include a wide range of Solid State Power Amplifiers (SSPAs) and Low Noise Amplifiers (LNAs) originally from Paradise Datacom and a range of organically developed products within TMS. Satcom SSPAs are considered a core competence of Paradise Datacom's product line who have invested heavily in converting it's complete amplifier offering from GaAs to GaN from C-Band all the way to Ka-Band.
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Product
2 GHz to 6 GHz, 45 dBm Power Amplifier
HMC7885
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The HMC7885 is a 32 W gallium nitride (GaN), monolithic microwave integrated circuit (MMIC) power amplifier (PA) module that operates between 2 GHz and 6 GHz, and is provided in an 18-lead hermetically sealed module. The amplifier typically provides 21 dB of small signal gain and 45 dBm of saturated radio frequency (RF) output power. The amplifier draws 2200 mA of quiescent current (IDD) from a 28 V dc supply. The RF input and output are dc blocked and matched to 50 Ω for ease of use.
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Substrate Manufacturing
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KLA’s substrate manufacturing portfolio includes defect inspection and review, metrology and data management systems that help substrate manufacturers manage quality throughout the wafer fabrication process. Specialized wafer inspection and review tools assess wafer surface quality and detect, count and bin defects during production and as a critical part of outgoing wafer qualification. Wafer geometry systems ensure the wafer shape is extremely flat and uniform in thickness, with precisely controlled wafer shape topography. Data analysis and management systems proactively identify substrate fabrication process excursions that can lead to yield loss. KLA’s substrate manufacturing systems support process development, production monitoring and final quality check of a broad range of substrate types and sizes including silicon, prime silicon, SOI, sapphire, glass, GaAs, SiC, GaN, InP, GaSb, Ge, LiTaO3, LiNBO3, and epitaxial wafers.
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Product
DL-ISO 2 Vpp MMCX Tip
DL-ISO-2V-TIP
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- Ideal for GaN and SiC devices- Highest system accuracy- Fastest rise time- High CMRR - 160 dB
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Wafer Thickness Measuring System
WT-425
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Contact type can measure any materials within 0.2 µm (2 σ at 20℃ ±1℃). The wafer floats positions while measurement points change and it does not damage even thin wafers. Best for the process control of compound wafers and oxide wafers. (SiC, GaN, LT, Sapphire and Bonded Wafers)
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RF Amplifiers up to 2500 MHz
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L and S Band 1,2,4, and 8 Kilowatt rack mount solid state microwave amplifiers ideal for CW and pulse TWT amplifier replacement utilizing GaN technology and rivals the TWT amplifier in size and weight. Also available is our broad line of high power modules including 25, 50, and 100 watt pallets for integrating into your own power amplifier design.
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Rad Hard GaN Drivers
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The space market has been driving towards more efficient power management solutions. Part of the drive includes the use of Gallium Nitride Field Effect Transistors (GaN FETs) for power conversion. GaN FETs have higher power conversion efficiency and have more natural immunity to radiation, due to them being wide-bandgap semiconductors. Equally important is the use of the correct driver that will allow reliable operation and maximize the benefits of the GaN FETs. Some of the key driver requirements are: a well-regulated gate drive voltage; high source/sink current capability and a split driver output stage.
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Power Management Controller
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Macom Technology Solutions Holdings Inc.
Hghly integrated Power Management Integrated Circuit for GaN Power Amplifier
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RF Devices that deliver Comprehensive Solutions for Wireless Systems
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Sumitomo Electric Industries, Ltd.
GaN HEMTs, GaAs FETs , MMICs, and low-noise HEMT solutions offer high performance and uncompromised reliability for radar, base stations, SATCOM, point to point, and space applications.
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Solid-State High Power Amplifier 18 - 26.5 GHz
AMP4065LC-2
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Exodus Advanced Communications
Designed for EMI/RFI, lab, and general communication applications. Exodus Broadband SSPA product feature GaN, GaAsFET discrete and Chip & Wire Hybrid technologies covering one octave through decades frequency ranges from Operating Frequency Range 18.0-26.5 GHz.
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Driver Amplifiers (< 3 W)
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Qorvo's driver amplifiers are designed to provide good linear or efficiency performance for gain stages prior to the final power amplifier in a transmitter chain. These products support frequencies up to 46 GHz, using process technologies such as InGaP HBT, power pHEMT, E/D pHEMT and GaN.
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Product
DL-ISO 1000 Vpp Square Pin Tip
DL-ISO-1000V-TIP
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- Ideal for GaN and SiC devices- Highest system accuracy- Fastest rise time- High CMRR - 160 dB
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Product
Low Temperature Gas Source
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Get a low-cost means to introduce a gas without thermal pre-cracking using Veeco’s low-temperature gas source for molecular beam epitaxy (MBE) systems. The source features a large conductance tube for fast gas switching and a diffuser end plate for good growth uniformity. It is an ideal gas injector for CBr4 for carbon doping in GaAs and NH3 for GaN growth, as well as any other gases that do not require thermal pre-cracking. Enhance system capabilities further by combining the source on one mounting flange with an Atomic Hydrogen Source or 5cc Dopant Source.
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High Voltage Optically Isolated Probe, 700 MHz Bandwidth. Includes soft-carrying case.
DL07-ISO
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The DL-ISO enables highest confidence in GaN and SiC device characterization with highest accuracy, best signal fidelity, and comprehensive connectivity.
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High Voltage Optically Isolated Probe, 1 GHz Bandwidth. Includes soft-carrying case.
DL10-ISO
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The DL-ISO enables highest confidence in GaN and SiC device characterization with highest accuracy, best signal fidelity, and comprehensive connectivity.
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Product
Space Power Solutions
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Teledyne e2v HiRel Electronics (HiRel) offers leading edge power solutions dedicated for high-reliability applications. The introduction of Galium Nitride (GaN) technology solutions enable high power density designs with four times less space requirements than traditional MOSFETs. The Teledyne HiRel Point-of-Load (POL) products combine multiple load capabilities, outstanding radiation performance with high levels of integration and easy to use features.
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Product
High Throughput Test Platform for Multi-Site & Index Parallel Applications
ETS-88
Test Platform
The ETS-88 is an optimal test platform for testing a wide variety of devices including: simple analog, high precision, high voltage, high current / power, automotive, video, audio, complex mixed-signal, as well as emerging power processes like SiC and GaN.
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60 V Common Mode Differential Probes
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The 60 V Common Mode Differential Probes are the ideal probes for lower voltage GaN power conversion measurement with the highest accuracy, best CMRR, and lowest noise.
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ST/MT Family
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MT System is a configurable test equipment suitable to verify static and dynamic parameters of power semiconductors (i.e. IGBT, MOSFET, DIODE, THYRISTOR, SiC, GaN, etc) packaged and unpackaged (discrete, module and substrate). ST System is a test equipment suitable to verify stability or drift of all static parameters of discrete power semiconductors.
