GaN
Gallium Nitride is a stable wide bandgap semiconductor material. Also known as: Gallium Nitride
See Also: LED, Transistor
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Product
Wideband GaN Amplifiers
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The Teledyne RF & Microwave family of GaN-based amplifiers maximizes power density and efficiency, and establishes a new benchmark for small size in the 0.1 to 6.0 GHz range that operates over multi octave. With dimensions of 2.5"L x 2"W x 0.42"H at only 2.1 cubic inches, these modular, non-ITAR GaN amplifiers maintain the rugged design characteristics needed for harsh airborne and land based requirements.
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Rad Hard GaN FETs
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Wide band gap semiconductor technologies such as Gallim Nitride Field Effect Transistors (GaN FETs) have been gaining interest for power management and conversion in space applications. These devices feature higher breakdown voltage, lower RDS(ON) and very low gate charge enabling power management systems to operate at higher switching frequencies while still achieving higher efficiency and a smaller solution footprint. There is an additional benefit from GaN devices that make them attractive to the space market. These devices are inherently immune to total ionizing dose radiation.
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Solid State GaN (Gallium Nitride) Amplifiers
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Fairview Microwave’s solid state GaN (Gallium Nitride) power amplifiers (also called SSPAs) feature broad frequency bands ranging from 30 MHz to 7.5 GHz and very high gain levels from 43 to 60 dB. These GaN SSPAs also show impressive harmonic response (-15 to -20 dBc) under worst case conditions. Saturated output power levels range from 10W to 100W with 20% to 35% Power Added Efficiency (PAE). All of our high power solid state GaN amplifiers from Fairview have internally regulated single voltage supplies. Our GaN SSPAs are designed to withstand environmental conditions such as humidity, altitude, shock and vibration with an operating temperature ranges from -40°C to +85°C. Some models are also equipped with integrated heat sinks and cooling fans. Most designs are EAR99.
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Product
DL-ISO 10 Vpp MMCX Tip
DL-ISO-10V-TIP
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- Ideal for GaN and SiC devices- Highest system accuracy- Fastest rise time- High CMRR - 160 dB
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Product
Test & Measurement Instrument Amplifiers
MPA-series
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The MPA-series Test & Measurement Instrument Amplifiers are based on state-of-the-art GaN PA modules and operate from 0.7 to 26.5 GHz (multiple frequency options are available). They provide High continuous power across the band, high linearity for wideband communications testing, have variable gain adjustment and a high-resolution display shows amplifier status. Amplifiers offer a wide range of application-specific requirements including simultaneous high-power, wide bandwidth, low harmonic power and high linearity.
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Substrate Manufacturing
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KLA’s substrate manufacturing portfolio includes defect inspection and review, metrology and data management systems that help substrate manufacturers manage quality throughout the wafer fabrication process. Specialized wafer inspection and review tools assess wafer surface quality and detect, count and bin defects during production and as a critical part of outgoing wafer qualification. Wafer geometry systems ensure the wafer shape is extremely flat and uniform in thickness, with precisely controlled wafer shape topography. Data analysis and management systems proactively identify substrate fabrication process excursions that can lead to yield loss. KLA’s substrate manufacturing systems support process development, production monitoring and final quality check of a broad range of substrate types and sizes including silicon, prime silicon, SOI, sapphire, glass, GaAs, SiC, GaN, InP, GaSb, Ge, LiTaO3, LiNBO3, and epitaxial wafers.
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Product
GaN Amplifiers
SBP-3233831838-KFKF-E1-HR
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Model SBP-3233831838-KFKF-E1-HR is a power amplifier with a typical small signal gain of 18 dB and a nominal Psat of +38 dBm across the frequency range of 32 to 38 GHz. The DC power requirement for the amplifier is +30 VDC/2 A. The mechanical configuration is an inline structure with K(F) connector as its input port and output port. Other port configurations, such as K connectors and WR-28 waveguides for either the input or output, are also available under different model numbers.
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Product
DL-ISO 40 Vpp MMCX Tip
DL-ISO-40V-TIP
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- Ideal for GaN and SiC devices- Highest system accuracy- Fastest rise time- High CMRR - 160 dB
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Product
SSPAs / LNAs / Broadband
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SSPAs based on the latest Galium Nitride (GaN) technology offer the best combination of high peak powers, high reliability, high efficiency, and soft degradation. High efficiency and high power are hallmarks of GaN technology, enabling SSPAs to challenge traditional tube-based amplifiers across the design spectrum. In addition the long lifetime from these devices, combined with the gradual degradation should individual devices fail, provide unparalleled service lifetime. Techniques such as bias modulation and linearization provide even better prime-power efficiency while still meeting the demanding requirements of pulsed or CW applications.
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Product
Dynamic Test Systems
H3TRB | HTGB (HTGS) | RTGB (RTGS)
Test System
Durability and reliability of wide-bandgap materials such as SiC and GaN are an important topic. The focus here is on new failure mechanisms whose effects are not visible with traditional H(3)TRB/HTGS – but which nevertheless have an influence on the real application.
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Product
High Voltage Optically Isolated Probe, 350 MHz Bandwidth. Includes soft-carrying case.
DL03-ISO
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The DL-ISO enables highest confidence in GaN and SiC device characterization with highest accuracy, best signal fidelity, and comprehensive connectivity.
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Product
60 V Common Mode Differential Probes
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The 60 V Common Mode Differential Probes are the ideal probes for lower voltage GaN power conversion measurement with the highest accuracy, best CMRR, and lowest noise.
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Product
High Throughput Test Platform for Multi-Site & Index Parallel Applications
ETS-88
Test Platform
The ETS-88 is an optimal test platform for testing a wide variety of devices including: simple analog, high precision, high voltage, high current / power, automotive, video, audio, complex mixed-signal, as well as emerging power processes like SiC and GaN.
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Product
DL-ISO 200 Vpp MMCX Tip
DL-ISO-200V-TIP
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- Ideal for GaN and SiC devices- Highest system accuracy- Fastest rise time- High CMRR - 160 dB
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Product
Solid-State High Power Amplifier 18 - 26.5 GHz
AMP4065LC-2
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Exodus Advanced Communications
Designed for EMI/RFI, lab, and general communication applications. Exodus Broadband SSPA product feature GaN, GaAsFET discrete and Chip & Wire Hybrid technologies covering one octave through decades frequency ranges from Operating Frequency Range 18.0-26.5 GHz.
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Product
DL-HCM Series Accessories Kit with Probe Holder, Micro IC Grabbers (Qty. 2), and Y-Banana Adaptor
DL-HCM-Acc-Kit
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60 V of common mode and 80 V differential input range with 1 GHz of bandwidth, make these probes ideal for lower voltage GaN power conversion measurements. The 60 V of common mode is well suited for handling any float of the battery and bulk/absorption voltage during charging, while the 80 V differential input range provide margin for any overshoot.
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Product
Rad Hard GaN Drivers
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The space market has been driving towards more efficient power management solutions. Part of the drive includes the use of Gallium Nitride Field Effect Transistors (GaN FETs) for power conversion. GaN FETs have higher power conversion efficiency and have more natural immunity to radiation, due to them being wide-bandgap semiconductors. Equally important is the use of the correct driver that will allow reliable operation and maximize the benefits of the GaN FETs. Some of the key driver requirements are: a well-regulated gate drive voltage; high source/sink current capability and a split driver output stage.
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Product
Amplifiers
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We have designed and manufactured amplifiers using all major semiconductor materials, LDMOS, GaN, GaAs, and InP, to produce narrow, wideband, and pulse, receive and transmit amplifiers from 1 MHz to 220 GHz and power levels from mW to over 10 kW.
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Product
IsoVu Isolated Probes
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The IsoVu Measurement Systems can make nearly impossible measurements – like high-side Vgs- a reality, providing today’s power engineer with measurement insights not available in other power systems and instruments. When performing near-impossible measurements, especially in those involving Gallium Nitride (GaN) and Silicon Carbide (SiC), it can be extremely time consuming and cumbersome. IsoVu eliminates those concerns: IsoVu probes offer better common mode rejection and higher bandwidth for high EMI environments and on power FETs like SiC and GaN.
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Product
1 GHz 60 V Common Mode Differential Probe
DL10-HCM
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60 V of common mode and 80 V differential input range with 1 GHz of bandwidth, make these probes ideal for lower voltage GaN power conversion measurements. The 60 V of common mode is well suited for handling any float of the battery and bulk/absorption voltage during charging, while the 80 V differential input range provide margin for any overshoot.
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Product
Solid-State RF amplifier module for High Power Testing
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Exodus Advanced Communications
Exodus introduces the AMP1071 - a Solid-State RF amplifier module covering the entire ultra-wide 2.0-20.0GHz frequency range instantaneously at 20W CW minimum. Using State of the Art GaN devices, the AMP1071 operates from a 32VDC source at less than 10A consumption. This module is suitable for use with all single channel modulation standards and applications requiring high power and ultra-wide band coverage. It has built-in protection circuits, high reliability and ruggedness. Typical applications include High Power Testing, EMI/RFI, EW and Communications and Jamming.
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Product
500 MHz 60 V Common Mode Differential Probe
DL05-HCM
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60 V of common mode and 80 V differential input range with 1 GHz of bandwidth, make these probes ideal for lower voltage GaN power conversion measurements. The 60 V of common mode is well suited for handling any float of the battery and bulk/absorption voltage during charging, while the 80 V differential input range provide margin for any overshoot.
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Product
Defect Inspection Systems
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Candela® defect inspection systems detect and classify a wide range of critical defects on compound semiconductor substrates (GaN, GaAs, InP, sapphire, SiC, etc.) and hard disk drives, with high sensitivity at production throughputs.
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Product
250 MHz 60 V Common Mode Differential Probe
DL02-HCM
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60 V of common mode and 80 V differential input range with 1 GHz of bandwidth, make these probes ideal for lower voltage GaN power conversion measurements. The 60 V of common mode is well suited for handling any float of the battery and bulk/absorption voltage during charging, while the 80 V differential input range provide margin for any overshoot.
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RF Devices that deliver Comprehensive Solutions for Wireless Systems
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Sumitomo Electric Industries, Ltd.
GaN HEMTs, GaAs FETs , MMICs, and low-noise HEMT solutions offer high performance and uncompromised reliability for radar, base stations, SATCOM, point to point, and space applications.
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Product
Saluki SPA Series Solid State Power Amplifier (max. 23KW output power)
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Saluki SPA series is a solid-state RF power amplifier with an output frequency of maximum 110GHz and an output power of a maximum of 23000W. Its design is based on the most advanced GaN technology in the industry, and its power output is efficient and reliable. The product has functions such as temperature and current detection, alarm protection and so on.The broadband solid state power amplifier is mainly used for testing and measuring instruments, Communication or interference, aviation control and other fields.*Customization Available*
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Solid State Broadband High Power Amplifier
Model 2215
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The 2215 is suitable for octave bandwidth high power CW, modulated, and pulse applications. This amplifier utilizes high power GaN devices that provide wide frequency response, high gain, high peak power capability, and low distortions. Exceptional performance, long-term reliability and high efficiency are achieved by employing advanced broadband RF matching networks and combining techniques, EMI/RFI filters, and all qualified components. The amplifier is constructed within a single 5RU drawerincluding the forced air-cooling. Available operating voltage configurations are single-phase 220 VAC up to 400 Hz and 28 VDC.
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Space Power Solutions
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Teledyne e2v HiRel Electronics (HiRel) offers leading edge power solutions dedicated for high-reliability applications. The introduction of Galium Nitride (GaN) technology solutions enable high power density designs with four times less space requirements than traditional MOSFETs. The Teledyne HiRel Point-of-Load (POL) products combine multiple load capabilities, outstanding radiation performance with high levels of integration and easy to use features.
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Product
50 µs Pulse Medium Current Source/Measure Unit (MCSMU)
B1514A
Source Measure Unit
The 50 s Pulse Medium Current SMU is an SMU designed for faster pulsed IV measurement. It enables a pulsed measurement down to 50 s pulse width, a 10 times or more narrow pulsed measurement than provided by a comparable conventional SMU. In addition, the instrument offers a wider range and versatility, up to 30 V / 1A, with voltage/current programmability. It is useful to characterize high to medium power devices on the new materials such as SiC and GaN, and organic devices, and the MCSMU expands your choices of pulsed IV measurement.
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Product
Power Device Analyzer / Curve Tracer
B1505A
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The Keysight B1505A Power Device Analyzer / Curve Tracer is the only single box solution available with the capability to characterize high power devices from the sub-picoamp level up to 10 kV and 1500 A. These capabilities allow evaluation of novel new device such as IGBT and materials such as GaN and SiC. The B1505A supports a variety of modules: high voltage SMU (HVSMU), high current SMU (HCSMU), ultra high current (UHC) module, ultra high voltage (UHV) module and high voltage medium current (HVMC) module. The B1505A also supports: high-power SMU (1 A/200 V), medium-power SMU (100 mA/100 V) ,medium-current SMU (1 A/30V pulsed, 100 mA/30V DC) and a multi-frequency capacitance measurement unit (1 kHz 5 MHz). Its ten-slot modular mainframe allows you to configure the B1505A to suit your measurement needs.
