Zener Diode
current flow from cathode to anode reverses when zener voltage reached.
See Also: Diode, Laser Diode, Diode Test, Photodiode
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Vegas Data Diode
01-09838
Non-ruggedized module that addresses concerns regarding use of untrusted, commercial-off-the-shelf (COTS) bus logging on aircraft with a MIL-STD-1553 or ARINC-429 bus interface.
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TVS Diodes
Power TVS diodes provide outstanding protection for both alternating current and direct current power line applications by a Power TVS diode in a surface mount package. When compared to other devices, such as MOVs, power TVS diodes provide much better protection. Bourns provides a broad voltage range of devices with surge current ratings ranging from 3, 6, 10, and 15 kA to suit a variety of applications.
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MICROWAVE VARIABLE-CAPACITANCE DIODES FROM 1 to 40 GHz
Insight Product Company offers Microwave Variable-Capacitance Diodes with capacity coverage ratio over 10 times and operating in frequency range from 1 to 40 GHz. The p+ -n1 - n2 -n+ silicon variable-capacitance diodes are designed to electrically tune frequences and phases of microwave oscillators - parts of hybrid microcircuits that provide capsulation and protection against ambient action.
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High-Speed Switching Diodes 33 To 140 GHz
Insight Product Company offers high-speed switching diodes with switching time up to 2 nsec and operating frequency range up to 140 GHz. Silicon p+-p-n-n+ high-speed switching diodes are designed to be used in mm-wave switching devices, phase changers, modulators, attenuators for the millimeter wavelength range. They are fabricated in the metal-ruby packages with hard-lead carrier (diameter 3.0 mm, 1.5 mm).
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SCR Diode Testers
SCRs and Diodes are used in the power sections of various power systems. A SCR Diode Tester is an important piece of equipment to determine if a SCR or a diode is defective in a power circuit. It is difficult and time-consuming to troubleshoot SCRs and Diodes with a digital meter.
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PIN Diodes
PIN photodiodes convert light to current – without a bias voltage having to be applied. Silicon is commonly used as an inexpensive detector material in the Vis range. For higher demands, InGaAs is used; it covers the widest spectral range from the Vis to the NIR. We offer silicon carbide as a “solar-blind” detector specifically for the UV range.
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THz Diodes
Macom Technology Solutions Holdings Inc.
The intrinsic cutoff frequencies of these Schottky junction devices exceed 1 THz, making them well-suited for use in mixers and detectors operating in the frequency bands from 60 GHz into the hundreds of GHz bands.
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Planar-Doped Barrier Diode Detector, 0.01 to 33 GHz
8474C
The Keysight 8474C is a high-performance detector using a gallium arsenide, planar-doped barrier detecting element. It features extremely flat frequency response over its entire band of operation and very good frequency response stability versus temperature. The Keysight 8474C is also very rugged with high resistance to ESD damage. The Keysight 8474C detector is available with a 3.5-mm (mates with SMA, 0.01 to 33 GHz) connector. This detector offers the options for optimal sqaure-law loads (Option 102) and for positive polarity output (option 103). Because the unit-to-unit frequency response tracking of this device is typically better than 0.3 dB, no matched response option is offered.
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Laser Diode
A laser diode, also known as an injection laser or diode laser, is a semiconductor device that produces coherent radiation (in which the waves are all at the same frequency and phase) in the visible or infrared (IR) spectrum when current passes through it.
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Two-Path Diode Power Sensors
NRP-Z2x1
The R&S®NRP-Z211 two-path diode power sensors combine all key characteristics relevant for their use in production: They are cost-effective, fast, precise and USB-capable. The sensors support the same measurement functions as the R&S®NRPxx‑Z11/R&S®NRP‑Z2x/R&S®NRP‑Z31 three-path diode power sensors and offer the best price/performance ratio in their class.
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Gunn Diodes
The Gunn diode is the best known and most readily available device in the family of transferred electron devices (TED). They are employed as DC to microwave converters using the negative resistance characteristics of bulk Gallium Arsenide (GaAs) and only require a standard, low impedance, constant voltage power supply, thereby eliminating complex circuitry. Teledyne Lincoln Microwave’s DC1200 series of GaAs Gunn diodes is designed for operation at fixed frequency (determined by the oscillator cavity) within a specified band under CW or pulsed conditions.
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2.5G DFB Laser Diode Chips
Guilin GLsun Science and Tech Group Co., LTD
2.5G DFB Laser Diode Chips by GLSN
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Diode Power Sensor
8481D
The 8481D diode power sensor measures average power over the frequency range 10 MHz to 18 GHz and power range -70 to -20 dBm (50 dB dynamic range).
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Silicon Carbide Diodes
In addition to ensuring compliance with today's most stringent energy efficiency regulations (Energy Star, 80Plus, and European Efficiency), ST's silicon-carbide diodes show four times better dynamic characteristics with 15% less forward voltage (VF) than standard silicon diodes. Silicon-carbide diodes belong to our STPOWER family.
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SMD Tweezer Capacitance Resistance Diode Tweezers Test Pen Multimeter SMD Meter
VA50372
Shanghai Yi Hua V&A Instrument Co., Ltd. CO.,LTD
SMD tweezer Capacitance Resistance Diode Tweezers Test Pen Multimeter SMD Meter VA503 SMD Components Identifier
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LIV – High-power Laser Diode Testing
An important aspect of the development and manufacture of laser diodes is the so-called laser diode characterization, or laser IV curve. By applying increasing current to the laser diode so it that emits light, the optical output is measured together with the voltage drop across the diode element. The resulting LIV curve reveals important clues about the quality of manufacture and the performance of the laser diode, enabling a pass/fail decision to be met.
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SP8T RF Pin Diode Switches To 12 GHz
Pulsar Microwave manufactures 8-way absorptive and reflective RF switches in single-pole 8-throw configuration. They fulfill broadband and narrowband requirements from 40 MHz to 12 GHz and handle 200 milliwatts input power. The SP8T switches have an isolation of 60 dB and switching time of 100 ns. Most models specify 1.6:1 or better VSWR at all ports. The SP8T switches operate on a power supply of +/- 5VDC and switching control is 0-5 TTL logic. The unit comes standard with SMA female connectors. Options for control are line drivers and decoders.
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Diode Lasers
6-Watt Blue Engraving Laser
Advanced Photonic Sciences LLC
Can be used in laser engraving, marking, and cutting applications. Process wood, plastics, metals, anodized aluminum, stone, tile, and other materials. The adjustable spot can be adapted to the needed distance from laser to the material. The spot, with a size of <100 μm, creates very fine engravings and sharp cutting edges. The built-in driver accepts TTL and analog signals for power adjustments. The laser can be controlled between 0% and 100% of output power. It comes preset and needs only a power supply and a signal source.
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Laser Diodes
Our laser diode portfolio is broad, extending from cw laser diodes to pulsed laser diodes to high-power laser diodes. For special areas of application VCSELs and quantum cascade lasers are also included in our range of products.
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Low-Barrier Schottky Diode Detector, 10 MHz to 12.4 GHz
423B
The Keysight 423B Low-Barrier Schottky Diode detector has been widely used for many years in a variety of applications including leveling and power sensing. It offers good performance and ruggedness. Matched pairs (Option 001) offer very good detector tracking. A video load (Option 002) extends the square-law region to at least 0.1 mW (-10 dBm).
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Beam Lead PIN Diodes
The SemiGen SBL 2000 series Beam Lead PIN Diodes feature fast switching speeds at both low capacitance and resistance. Beam Lead PIN Diodes have high levels of mechanical strength and stability during assembly. These diodes are suitable for microstrip or stripline circuits as well as circuits requiring high isolation from a series of mounted diodes such as multi-throw switches, phase shifters, attenuators and modulators.
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Meter, Hand Held, Capacitance, Diode, Resistance, 20000 µF, 1999
72-8150
Compact meter is ideal for capacitor measurement in service and assembly applications. Quickly and accurately measure capacitance values up to 20mF (20,000μF), in nine ranges, and resistance to 2,000MΩ in nine ranges.
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Handheld Digital Multimeter, AC/DC Voltage, Continuity, Diode, Resistance, Temperature, 3.5, 2000
72-13435
*Clear LCD Display*Equipped with comfortable protective cover, test probe holder*2m drop test, precision protection*Auto Power Off*Auto Backlight Off*Loud Buzzer Sound*Knobs shift smoothly, in-line with ergonomics*Powered by AAA 1.5V x 2 batteries*12-month limited warranty *view Terms & Conditions for details
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Noise Suppression Products / EMI Suppression Filters / TVS Diodes (ESD Protection Devices)
Murata noise suppression products include compact EMI suppression filters that efficiently eliminate noise, L Cancel Transformers (LCTs) that greatly suppress noise in high-frequency bands by reducing the ESL generated inside capacitors and in boards, and TVS Diodes that guard semiconductor devices against electrostatic discharge from external sources. Murata supplies products that support a variety of approaches to suppressing noise.
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MINIATURE SILICON DIODE TEMPERATURE SENSOR, 2 To 600 Degress Kelvin
Insight Product Company offers SILICON DIODE TEMPERATURE SENSORS CAN BE USED FOR TEMPERATURE Â MEASUREMENTS IN DIFFERENT FIELDS OF CRYOGENIC ENGINEERING AND EXPERIMENTAL PHYSICS. THEY ARE MINIATURE AND OPERATE IN THE TEMPERATURE RANGE FROM 2 TO 600 K.
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Planar-Doped Barrier Diode Detector, 0.01 to 50 GHz
8474E
The Keysight 8474E is a high-performance detector using a gallium arsenide, planar-doped barrier detecting element. It features extremely flat frequency response over its entire band of operation and very good frequency response stability versus temperature. The Keysight 8474E is also very rugged with high resistance to ESD damage. The Keysight 8474E detector is available with a 2.4-mm (0.01 to 50 GHz) connector. This detector offers the options for optimal square-law loads (Option 102) and for positive polarity output (Option 103). Because the unit-to-unit frequency response tracking of this device is typically better than plus or minus 0.3 dB, no matched response option is offered.
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SP16T RF Pin Diode Switches To 10 GHz
Pulsar Microwave's 16-way switches cover 500 MHz to 10 GHz in single pole, 16-throw configuration. Maximum input power is 200 mW and switching time is 100 ns. SMA female connectors are standard. A 15-pin D-SUB male connector makes the internal connections to the power, ground and logic circuitry. Switching control is TTL with the option of line drivers and decoders.
