Light-Emitting Diode
Semiconductor diode that emits narrow spectrum light by converting electric energy into electromagnetic radiation.
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Product
Diode Driver & Laser System Controllers
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The laser controllers provide a simple method of controlling Lumina and other popular laser diode drivers or full laser systems. They include the ability to easily control current levels, pulse modes, and interlock controls as well as monitor voltage and current levels as well as q-switch triggering, external triggering, sync output, and additional I/O signals.
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Product
Millimeter-wave and Microwave GaAs Diodes
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Keysight Technologies provides MMIC diodes ideal for microwave radio, aerospace and defense, and instrumentation applications.
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Product
Varactor Tuning Diodes
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Macom Technology Solutions Holdings Inc.
MACOM’s GaAs and Silicon varactor tuning diodes provide broadband performance ranging from 10 MHz to 70 GHz. They are ideal for high Q filter and VCO electronic tuning circuits and are available in die form, flip chip, plastic and ceramic packaging. These GaAs diodes boast a constant gamma series for higher frequency and high Q applications and silicon abrupt and hyper abrupt series in plastic packaging are suitable for high volume surface mount applications.
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Laser Diode Drivers
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Renesas offers a portfolio of laser diode driver (LDD) ICs for DVD/CD/Blue-ray optical drive and laser projection applications.
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Millimeter Wave Zero Bias GaAs Schottky Diode
HSCH-9162
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The HSCH-9162 is suitable for medium-low barrier, zero bias detector applications. The HSCH-9162 is functional through W-band (110 GHz) and can be mounted in microstrip, finline, and coplanar circuits.
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Product
Tunnel Diode Zero Bias Detectors
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A tunnel diode zero-bias detector is a device that converts microwave and millimeter-wave radio frequency (RF) signals into a DC voltage without requiring an external power source
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Product
Planar-Doped Barrier Diode Detector, 0.01 to 50 GHz
8474E
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The Keysight 8474E is a high-performance detector using a gallium arsenide, planar-doped barrier detecting element. It features extremely flat frequency response over its entire band of operation and very good frequency response stability versus temperature. The Keysight 8474E is also very rugged with high resistance to ESD damage. The Keysight 8474E detector is available with a 2.4-mm (0.01 to 50 GHz) connector. This detector offers the options for optimal square-law loads (Option 102) and for positive polarity output (Option 103). Because the unit-to-unit frequency response tracking of this device is typically better than plus or minus 0.3 dB, no matched response option is offered.
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Product
CW IMPATT DIODES FROM 30 TO 140 GHz
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Insight Product Company offers IMPATT diodes with CW power up to 400 mW and operational frequency range up to 140 GHz. Silicon p+-p-n-n+ IMPATT diodes are designed to be used in the millimeter wave oscillators and amplifiers. They are fabricated in the metal-ruby packages with hard-lead carrier (diameter 3.0 mm, 1.5 mm).
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Product
Laser Diode Source Product Family
LDS-7200
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5 nanometers tuning range• 10 picometer setpoint accuracy• 0.1 picometer resolution• 20mW output power• 0.005 dB power stability• Built-in coherence control• Integrated function generator• USB remote interface• Application program with source code
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Laser Diode Modules: 635nm-660nm Visible Wavlength, Elliptical Beam
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The Optoelectronics Company Ltd
Custom lasing wavelengths, from 405 nm to 852 nm, output power options and laser engraving are available to your specifications. Both standard and custom configurations provide OEMs, end-users and systems integrators with complete cost-effective laser solutions.
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Product
MICROWAVE VARIABLE-CAPACITANCE DIODES FROM 1 to 40 GHz
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Insight Product Company offers Microwave Variable-Capacitance Diodes with capacity coverage ratio over 10 times and operating in frequency range from 1 to 40 GHz. The p+ -n1 - n2 -n+ silicon variable-capacitance diodes are designed to electrically tune frequences and phases of microwave oscillators - parts of hybrid microcircuits that provide capsulation and protection against ambient action.
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Product
.13u ESD diode
Impulse TSMC
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The Impulse TSMC .13u ESD diode was made to provide ESD discharge paths when integrating third party IP in an integrated circuit design for total ESD protection. The Impulse ESD diode has been successfully used with Dolphin Technologies, Artisan/ARM, TriCN/Synopsis I/O libraries, as well as popular IP blocks from RAMBUS, Chip Idea and other quality IP vendors. A 5.5 volt reverse bias anode to cathode operational specification enables the Impulse TSMC .13u ESD diode to be the device of choice for 5 volt tolerant designs.
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Product
Diode Tester
FEC200E
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Frothingham Electronics Corporation
The FEC200E is an automatic computer- controlled diode and rectifier tester. It is controlled by a standard PC-compatible computer running FreeDOS.
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USHIO Infrared Laser Diodes (705nm - 852nm)
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The Optoelectronics Company Ltd
USHIO OPTO's new 705nm, 40mW laser diodes, HL7001MG and HL7002MG are the first ever 705nm semiconductor lasers and are suitable for biomedical light sources. For more information, see HL7001MG/7002MG overview.
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Product
Photovoltaic System Bypass Diode Tester
FT4310
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Hioki is pleased to announce the launch of the Bypass Diode Tester FT4310 for Photovoltaic Systems. The FT4310, which is designed to test bypass diodes in strings of crystalline photovoltaic cells, can be used to detect open and short-circuit faults in bypass diodes by string either in daylight or at night. The instrument is the first portable device capable of detecting bypass diode open faults in operating panels (without requiring the panels to be shielded from sunlight).
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Product
Diode Arrays
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a silicon diode with minimal packaging overhead. The small signal 0603, 1005 and 1206 Chip Diodes are lead free with Cu/Ni/Au plated terminations while the other packages (SMA, SMB, SMC, 1408, 1607, 2010, 2419, 8L NSOIC, 16L NSOIC, SOT23, SOT23-6, 16L WSOIC) use 100 % Tin terminations. All Bourns® diodes are compatible with lead free manufacturing processes, conforming to many industry and government regulations on lead free components.
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Vegas Data Diode
01-09838
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Non-ruggedized module that addresses concerns regarding use of untrusted, commercial-off-the-shelf (COTS) bus logging on aircraft with a MIL-STD-1553 or ARINC-429 bus interface.
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Product
High-power Laser Diode Assembly
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The laser diode is one of the most common devices used throughout photonics. The micro-assembly process calls for the placement and bonding (align-&-attach) of single emitters, or multiple laser diodes (stacked or complete bars), the placement, active alignment and bonding of necessary micro-optical elements, subsequent device testing, and ultimately packaging and quality control. ficonTEC’s machine systems are capable of all the steps necessary for assembling laser diodes, even high-power devices. Multiple in-line systems can be configured to address entire process segments.
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2.5G DFB Laser Diode Chips
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Guilin GLsun Science and Tech Group Co., LTD
2.5G DFB Laser Diode Chips by GLSN
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KATANA & PILAS Pulsed Diode Lasers
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With external trigger functionality, nano- to picosecond pulse duration, and a wide range of wavelengths, the KATANA & PILAS series are our most versatile offering.
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SP16T RF Pin Diode Switches To 10 GHz
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Pulsar Microwave's 16-way switches cover 500 MHz to 10 GHz in single pole, 16-throw configuration. Maximum input power is 200 mW and switching time is 100 ns. SMA female connectors are standard. A 15-pin D-SUB male connector makes the internal connections to the power, ground and logic circuitry. Switching control is TTL with the option of line drivers and decoders.
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Product
Diode Pumped Actively Q-switched Lasers
NL120 Series
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NL120 series electro-optically Q-switched nanosecond Nd:YAG lasers provide up to 10 J per pulse with excellent stability. The innovative, diode‑pumped, self‑seeded master oscillator design results in Single Longitudinal Mode (SLM) output without the use of expensive narrow linewidth seed diodes and cavity‑locking electronics.
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Product
Gunn Diodes
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The Gunn diode is the best known and most readily available device in the family of transferred electron devices (TED). They are employed as DC to microwave converters using the negative resistance characteristics of bulk Gallium Arsenide (GaAs) and only require a standard, low impedance, constant voltage power supply, thereby eliminating complex circuitry. Teledyne Lincoln Microwave’s DC1200 series of GaAs Gunn diodes is designed for operation at fixed frequency (determined by the oscillator cavity) within a specified band under CW or pulsed conditions.
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Product
Two-Path Diode Power Sensors
NRP-Z2x1
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The R&S®NRP-Z211 two-path diode power sensors combine all key characteristics relevant for their use in production: They are cost-effective, fast, precise and USB-capable. The sensors support the same measurement functions as the R&S®NRPxx‑Z11/R&S®NRP‑Z2x/R&S®NRP‑Z31 three-path diode power sensors and offer the best price/performance ratio in their class.
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Laser Diode Burn-in Reliability Test System
58604
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The Chroma 58604 is a high density, multi-function, and temperature controlled module for laser diode burn-in and lifetime tests. Each module has up to 256 SMU channels which can source current and measure voltage in various control modes as described below.
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Product
MINIATURE SILICON DIODE TEMPERATURE SENSOR, 2 To 600 Degress Kelvin
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Insight Product Company offers SILICON DIODE TEMPERATURE SENSORS CAN BE USED FOR TEMPERATURE Â MEASUREMENTS IN DIFFERENT FIELDS OF CRYOGENIC ENGINEERING AND EXPERIMENTAL PHYSICS. THEY ARE MINIATURE AND OPERATE IN THE TEMPERATURE RANGE FROM 2 TO 600 K.
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SP4T RF Pin Diode Switches To 16 GHz
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The 4-way series of absorptive and reflective switches operate from 100 MHz to 16 GHz. They are rated at 200 mW maximum input power and have a switching time of 100 ns. SP4T switches that operate up to 8 GHz have a maximum VSWR of 1.6:1 and minimum isolation of 60 dB. All absorptive and reflective switches manufactured by Pulsar Microwave require both positive and negative 5-volt supplies. Additionally, the TTL control logic operates from 0 to +5 VDC. Voltage connection is made with feed thru terminals. Ground connection is made through the chassis and turret terminals.
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Bridge Rectifier Diodes
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ST’s portfolio of bridge rectifier diodes is intended for primary bridges. In input primary bridge applications, ST's 1200V bridge diodes achieve very low conduction losses thanks to very low forward voltage characteristics. They can operate at up to +175 °C junction temperature, as a result of reduced leakage currents. Bridge rectifier diodes are belonging to the STPOWER family.
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10G DFB Laser Diode Chips
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Guilin GLsun Science and Tech Group Co., LTD
10G DFB Laser Diode Chips by GLSN
