Materials Development Corporation
MDC continues to improve both the hardware and software for C-V measurements and analyses of semiconductor devices. Taking full advantage of the latest C-V measuring instruments and more powerful computers, MDC offers the widest variety of C-V and I-V measurement systems available.
- 818.700.8290
- (775) 854-2585
- info@mdc4cv.com
- 21541 Nordhoff St.
#B
Chatsworth, CA 91311
United States
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Software
Dielectric Constant
Materials Development Corporation
The Dielectric Constant option allows the user to measure the dielectric constant of a wide range of materials. Simply input a test voltage (in accumulation), the area (or diameter), and stray capacitance to determine the relative dielectric constant.
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TFT Test Systems
Materials Development Corporation
Model CSM/Win-TFT TEST SYSTEMS allows electrical measurements of thin film transistors (TFT's) used in flat panel displays (FPD's). MDC TFT TEST SYSTEMS can quickly and efficiently measure critical transistor parameters without the need for expensive parametric testers. Various model TFT TEST SYSTEMS are available for testing both linear and saturation characteristics to find parameters like ION, IOFF, mobility, and threshold voltage.
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FPP Software
Four Point Probe
Materials Development Corporation
For use with a manual four point prober, the MDC FPP Software operates in a convenient, single screen that displays both measurement parameters and testresults. The FPP software can measure Resistivity, Conductivity, Resistance, Doping, Thickness, and SheetResistance when used with a compatible current source and voltmeter or SMU.
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Mercury Probes
Materials Development Corporation
MERCURY PROBES are precision instruments that enable rapid, convenient, and non-destructive measurements of semiconductor samples by probing wafers with mercury to form contacts of well-defined area.
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Electrochemistry Tests
Materials Development Corporation
CyclicVoltammetry and Galvanostatic Charging are tests used throughout the industrial and scientific communities to study chemical reactions and behavior of electronic structures. They are extremely helpful in the monitoring of nano based dielectrics, used in super /ultra capacitors or self-assembled monolayers (SAMs). The Cyclic Voltammetry test applies a ramping voltage to a device and measures the resulting current. In acapacitor-like structure the current reveals loss in the dielectric as well as degradation over time. CyclicVoltammetry is used to characterize the performance of supercapacitors and ultracapacitors formed using various nano-technologies. It is also useful in the studies of self-assembled monolayers used for sensors.
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Ion Implant Analysis Option
Materials Development Corporation
Computes active dose, range, and straggle. Can model implants with various doses, energies and cap materials. Overlays theoretical and actual plots.
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Four-Point Probe
Materials Development Corporation
Materials Development Corporation offers the complete line of Four Point Probe systems from AIT. Systems are available to measue up to 12" diameter (300 mm) wafers as well as specialty systems for Photovoltaic wafers and substrates. For more information on these systems, contact MDC.
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Copper Diffusion TestSystems
Materials Development Corporation
MDC announces the addition of software and hardware for copper diffusion studies to its CSM/Win suite of semiconductor test systems and software. This new CSM/Win feature plays an important part in the development of processes and materials for the next advance in integrated circuit technology that employscopper as a conductor. Special Current-Voltage Bias-Temperature Stress (IV-BTS) software can measure the degradation of insulator quality due to copper diffusion.Multiple test sites can be stressed with a constant voltage while the current through each site is measured and recorded. The Current-Voltage Bias-Temperature Stress test supplements conventional MOS C-V measurements and Triangular Voltage Measurements (TVS) that are also employed in copper diffusion studies.
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MOS Capacitance-Time Measurement and Analysis
Materials Development Corporation
The Capacitance-Time transient resulting from an MOS device pulsed into deep depletion reveals important information about bulk properties of the semiconductor and about damage or contaminants introduced during processing.
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Triangular Voltage Sweep (TVS) Option
Materials Development Corporation
The TVS method measures the current-voltage characteristics of an MOS device at high temperature. This technique, which allows direct measurement of mobile ionmovement, has higher sensitivity and is much faster than the conventional CVBT measurement.
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Srive-Level Capacitance Profiling (DLCP) Measurement
Materials Development Corporation
Drive-levelcapacitance profiling is an extremely useful technique to characterize amorphoussilicon or other semiconductor material with large concentrations of deep band gap states.
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ReferenceWafer
RW10
Materials Development Corporation
MDC presents the RW10 Reference Wafer. A range of capacitors, resistors and semiconductor devices can bemeasured to verify the repeatability and accuracy of measurement systems. The MDC Model RW10 Reference Wafer is not actually a "wafer". It has the shape of a wafer and it includes capacitors, resistors, MOS devices, and a junction device in a wafer configuration to allow rapid verification of proper operation for capacitance-voltage and current-voltage instrumentation.
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Overlay Plots
Materials Development Corporation
The overlay option gives the user the ability to overlay several plots on one graph for comparison. Simply click and drag the mouse from the MDC logo at the bottom right corner of a plot to an open area on the screen to produce the overlay plot. By dragging other plots to this overlay, each plot will be added.
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Software
MOS C-V Measurement and Analysis
Materials Development Corporation
MOS capacitance-voltage measurement is one of the most common process monitoring diagnostics employed in device manufacturing. A vast amount of information can be derived from this simple test.
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Software
Junction Measurement and Analysis
Materials Development Corporation
A comprehensive set of analyses for junction diode or Schottky barriers begins with C-V data gathering that adjusts the voltage step to the slope of the C-V characteristics. This assures an optimum set of C-Vdata whether the voltage range is small or large. Doping profile and resistivity profile are both available at the touch of a key. Plots of 1/C2 - V or Log(C) - Log (V+ phi) show doping uniformity and doping slope factor. Exclusive recalculation options allow adjustment of stray capacitance and area to facilitate calibration using a standard reference wafer of known doping or resistivity.
