Materials Development Corporation
MDC continues to improve both the hardware and software for C-V measurements and analyses of semiconductor devices. Taking full advantage of the latest C-V measuring instruments and more powerful computers, MDC offers the widest variety of C-V and I-V measurement systems available.
- 818.700.8290
- (775) 854-2585
- info@mdc4cv.com
- 21541 Nordhoff St.
B
Chatsworth, CA 91311
United States of America
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Production Triangular Voltage Sweep (TVS) Option
Materials Development Corporation
In traditional TVS measurements, the operator must select the end points of the mobile ion peak todetermine the area to analyze. Though the selection of these points is a simple matter for the operator, the required input precludes using this technique in asemi-autonomous production environment. The goal of TVS Production testing is the rapid determination of mobile charge concentration with little or no operator input. The test methodology must be compatible with production environments where accuracy, easeof use, and minimum operator involvement are of paramount concern. Also, the possibility of automated wafer handling must be considered.
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MOS Doping Profile Analysis
Materials Development Corporation
MDC uses the comprehensive Ziegler algorithm toconvert pulsed MOS C-V data to a doping profile. The doping profile is accurate from the oxide semiconductor interface to the maximum depletion depth and is therefore useful for low dose ion implant monitoring. Peak doping, range, and total active dose are computed. The technique is sensitive enough to resolve changes in the substrate doping profile due to redistribution during oxidation.
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Cryogenic Probe Station
CryoPro
Materials Development Corporation
The MDC Model 441 Cryogenic Probe Station is a cost effective alternative to high-priced vacuum based cryogenic probe stations. With up to five probes available and sample diameters up to six inches, the MDC Cryogenic Probe Station allows for electrical measurements at temperatures near liquid nitrogen levels (77K).
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MOS Capacitance-Time Measurement and Analysis
Materials Development Corporation
The Capacitance-Time transient resulting from an MOS device pulsed into deep depletion reveals important information about bulk properties of the semiconductor and about damage or contaminants introduced during processing.
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Gate Oxide Integrity Option
Materials Development Corporation
Oxide integrity of MOS devices can be evaluated by various techniques such as Time Dependent DielectricBreakdown, Charge to Breakdown, or ramped voltage. When used with a prober, map distribution of breakdown fields. Output the data using histograms, cumulativefailure, or Weibull plots.
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Ion Implant Analysis Option
Materials Development Corporation
Computes active dose, range, and straggle. Can model implants with various doses, energies and cap materials. Overlays theoretical and actual plots.
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Electrochemistry Tests
Materials Development Corporation
CyclicVoltammetry and Galvanostatic Charging are tests used throughout the industrial and scientific communities to study chemical reactions and behavior of electronic structures. They are extremely helpful in the monitoring of nano based dielectrics, used in super /ultra capacitors or self-assembled monolayers (SAMs). The Cyclic Voltammetry test applies a ramping voltage to a device and measures the resulting current. In acapacitor-like structure the current reveals loss in the dielectric as well as degradation over time. CyclicVoltammetry is used to characterize the performance of supercapacitors and ultracapacitors formed using various nano-technologies. It is also useful in the studies of self-assembled monolayers used for sensors.
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Conductance Measurement and Analysis
Materials Development Corporation
MDC uses conductance to give a complete picture of MOS devices as well as to correct for series resistance effects. MDC C-V plotters use conductance and capacitance measurements to plot true device capacitance and depletion region conductance.
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Customized Software
Materials Development Corporation
If the software packages offered do not meet your specific needs,special software can be written for custom applications.The engineers and programmers at MDC candevelop or modify applications to fit your requirements. Examples include: *Customer specific measurements *Interfacing with required meters *Production versions of measurements *Interfacing with probers and other measurement platforms *Specialized requirements
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Production C-V Measurement
Materials Development Corporation
The production software offers a streamlined C-V plotting and bias-temperature stress program with minimumoperator input. A single keystroke begins the measurement.
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Copper Diffusion TestSystems
Materials Development Corporation
MDC announces the addition of software and hardware for copper diffusion studies to its CSM/Win suite of semiconductor test systems and software. This new CSM/Win feature plays an important part in the development of processes and materials for the next advance in integrated circuit technology that employscopper as a conductor. Special Current-Voltage Bias-Temperature Stress (IV-BTS) software can measure the degradation of insulator quality due to copper diffusion.Multiple test sites can be stressed with a constant voltage while the current through each site is measured and recorded. The Current-Voltage Bias-Temperature Stress test supplements conventional MOS C-V measurements and Triangular Voltage Measurements (TVS) that are also employed in copper diffusion studies.
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Overlay Plots
Materials Development Corporation
The overlay option gives the user the ability to overlay several plots on one graph for comparison. Simply click and drag the mouse from the MDC logo at the bottom right corner of a plot to an open area on the screen to produce the overlay plot. By dragging other plots to this overlay, each plot will be added.
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Triangular Voltage Sweep (TVS) Option
Materials Development Corporation
The TVS method measures the current-voltage characteristics of an MOS device at high temperature. This technique, which allows direct measurement of mobile ionmovement, has higher sensitivity and is much faster than the conventional CVBT measurement.
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Current-Voltage Measurement Option
Materials Development Corporation
CSM/Win Systems with an I-V option can measure both MOS and diode structures. For junctions, both forwardand reverse bias curves can be analyzed. Junction ideality factor, series resistance, and reverse saturation current are found. Solar cells can be checked for efficiency. Gate Oxide Integrity of MOS devices can be measured as well.
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Srive-Level Capacitance Profiling (DLCP) Measurement
Materials Development Corporation
Drive-levelcapacitance profiling is an extremely useful technique to characterize amorphoussilicon or other semiconductor material with large concentrations of deep band gap states.
