Materials Development Corporation
MDC continues to improve both the hardware and software for C-V measurements and analyses of semiconductor devices. Taking full advantage of the latest C-V measuring instruments and more powerful computers, MDC offers the widest variety of C-V and I-V measurement systems available.
- 818.700.8290
- (775) 854-2585
- info@mdc4cv.com
- 21541 Nordhoff St.
#B
Chatsworth, CA 91311
United States
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Electrochemistry Tests
Materials Development Corporation
CyclicVoltammetry and Galvanostatic Charging are tests used throughout the industrial and scientific communities to study chemical reactions and behavior of electronic structures. They are extremely helpful in the monitoring of nano based dielectrics, used in super /ultra capacitors or self-assembled monolayers (SAMs). The Cyclic Voltammetry test applies a ramping voltage to a device and measures the resulting current. In acapacitor-like structure the current reveals loss in the dielectric as well as degradation over time. CyclicVoltammetry is used to characterize the performance of supercapacitors and ultracapacitors formed using various nano-technologies. It is also useful in the studies of self-assembled monolayers used for sensors.
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Interface Trap Density Analysis Option
Materials Development Corporation
MDC offers interface trap density analysis using both the Conductance-Frequency and Quasi-statictechniques. The Conductance-Frequency method is recommended for fine-tuning of processes where the highest resolution is needed. The Quasi-static technique is recommended where moderate to high levels of interface traps are monitored, such as in radiation damage studies. Requires quasi-static option or variable frequency option.
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Ion Implant Analysis Option
Materials Development Corporation
Computes active dose, range, and straggle. Can model implants with various doses, energies and cap materials. Overlays theoretical and actual plots.
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Production C-V Measurement
Materials Development Corporation
The production software offers a streamlined C-V plotting and bias-temperature stress program with minimumoperator input. A single keystroke begins the measurement.
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MOS Capacitance-Time Measurement and Analysis
Materials Development Corporation
The Capacitance-Time transient resulting from an MOS device pulsed into deep depletion reveals important information about bulk properties of the semiconductor and about damage or contaminants introduced during processing.
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Triangular Voltage Sweep (TVS) Option
Materials Development Corporation
The TVS method measures the current-voltage characteristics of an MOS device at high temperature. This technique, which allows direct measurement of mobile ionmovement, has higher sensitivity and is much faster than the conventional CVBT measurement.
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Solar Cells/ Photovoltaic Devices
Materials Development Corporation
MDC offers a comprehensive array of current-voltage, capacitance-voltage, and resistivity measurements to characterize solar cells and PV devices. CSM/Win systems and software can help to fine tune your process for maximum efficiency. Critical values such as series and shunt resistances, maximum power point (both actual and theoretical), and fill factor are automatically determined.
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Copper Diffusion TestSystems
Materials Development Corporation
MDC announces the addition of software and hardware for copper diffusion studies to its CSM/Win suite of semiconductor test systems and software. This new CSM/Win feature plays an important part in the development of processes and materials for the next advance in integrated circuit technology that employscopper as a conductor. Special Current-Voltage Bias-Temperature Stress (IV-BTS) software can measure the degradation of insulator quality due to copper diffusion.Multiple test sites can be stressed with a constant voltage while the current through each site is measured and recorded. The Current-Voltage Bias-Temperature Stress test supplements conventional MOS C-V measurements and Triangular Voltage Measurements (TVS) that are also employed in copper diffusion studies.
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Gate Oxide Integrity Option
Materials Development Corporation
Oxide integrity of MOS devices can be evaluated by various techniques such as Time Dependent DielectricBreakdown, Charge to Breakdown, or ramped voltage. When used with a prober, map distribution of breakdown fields. Output the data using histograms, cumulativefailure, or Weibull plots.
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Dielectric Constant
Materials Development Corporation
The Dielectric Constant option allows the user to measure the dielectric constant of a wide range of materials. Simply input a test voltage (in accumulation), the area (or diameter), and stray capacitance to determine the relative dielectric constant.
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Conductance Measurement and Analysis
Materials Development Corporation
MDC uses conductance to give a complete picture of MOS devices as well as to correct for series resistance effects. MDC C-V plotters use conductance and capacitance measurements to plot true device capacitance and depletion region conductance.
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TFT Test Systems
Materials Development Corporation
Model CSM/Win-TFT TEST SYSTEMS allows electrical measurements of thin film transistors (TFT's) used in flat panel displays (FPD's). MDC TFT TEST SYSTEMS can quickly and efficiently measure critical transistor parameters without the need for expensive parametric testers. Various model TFT TEST SYSTEMS are available for testing both linear and saturation characteristics to find parameters like ION, IOFF, mobility, and threshold voltage.
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Srive-Level Capacitance Profiling (DLCP) Measurement
Materials Development Corporation
Drive-levelcapacitance profiling is an extremely useful technique to characterize amorphoussilicon or other semiconductor material with large concentrations of deep band gap states.
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Hot Chucks
Materials Development Corporation
Probe stations to suit all measurement requirementswhether production, engineering or research. See individual data sheets for more details.
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ReferenceWafer
RW10
Materials Development Corporation
MDC presents the RW10 Reference Wafer. A range of capacitors, resistors and semiconductor devices can bemeasured to verify the repeatability and accuracy of measurement systems. The MDC Model RW10 Reference Wafer is not actually a "wafer". It has the shape of a wafer and it includes capacitors, resistors, MOS devices, and a junction device in a wafer configuration to allow rapid verification of proper operation for capacitance-voltage and current-voltage instrumentation.
